Step Dynamics during Molecular Beam Epitaxy on Si(100) and GaAs(100) Surfaces.

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Segregation and trapping of erbium during silicon molecular beam epitaxy

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...

Effects of hydrogen during molecular beam epitaxy of GaN

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 × 1011 cm-2) with the average lateral size of 7 nm ca...

Self - assembled magnetic nanostructures prepared by molecular beam epitaxy on low energy surfaces

Self-assembled magnetic nanostructures prepared by molecular beam epitaxyon low energy surfacesNanostructures of MxPt1−x (M=Co and Fe) alloys have perpendicular magnetic aniso-tropy which makes them good candidates as high density magnetic recording media. Inthis thesis work, the structural and magnetic properties of these nanostructures werestudied as a function of the ...